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Transistor PMOS

\epsfig{file=PMOS.eps,height=90pt}

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Description

The PMOS model is a simple model of a p-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator. For more details please care for H. Spiro.

The model does not consider capacitances. A small fixed drain-source resistance is included (to avoid numerical difficulties).

Some typical parameter sets are:

W [m] L[m] Beta [1/V²] Vt [V] K2 K5 DW [m] DL [m]
50.e-6 8.e-6 .0085 -.15 .41 .839 -3.8e-6 -4.0e-6
20.e-6 6.e-6 .0105 -1.0 .41 .839 -2.5e-6 -2.1e-6
30.e-6 5.e-6 .0059 -.3 .98 1.01 0 -3.9e-6
30.e-6 5.e-6 .0152 -.69 .104 1.1 -.8e-6 -.4e-6
30.e-6 5.e-6 .0163 -.69 .104 1.1 -.8e-6 -.4e-6
30.e-6 5.e-6 .0182 -.69 .086 1.06 -.1e-6 -.6e-6
20.e-6 6.e-6 .0074 -1. .4 .59 0 0

Boîte de dialogue

\begin{figure}\begin{center}
\epsfig{file=PMOS_gui.eps,width=300pt}
\end{center}\end{figure}

Propriétés par défaut

Fonction d'interface

Modèle Modelica

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Auteurs

www.modelica.org